http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100333724-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1998-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100333724-B1 |
| titleOfInvention | Mehod for forming metal wire of semiconductor device by using TiAlN antireflection layer |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a metal wiring of a semiconductor device, wherein a (TiAl) N film having a lower reflectance and transmittance than a TiN film, which is used as a conventional antireflection film, is used as an antireflection film. It is characteristic to form fine metal wiring more accurately by effectively preventing reflection in the exposure process. |
| priorityDate | 1998-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5352426 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524915 |
Total number of triples: 19.