Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
filingDate |
1996-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2002-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2002-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-100333234-B1 |
titleOfInvention |
Integrated circuit comprising a substrate and a wiring layer with a buffer layer between the substrate and the wiring layer |
abstract |
The thin film ferroelectric capacitor 20 includes a lower electrode structure 26 having an attachment metal layer 36 and a noble metal layer 38. Electrode 26 is deposited on thin film layer 24 including the layered superlattice material. The buffer layer is inserted between the substrate 22 and the lower electrode 26. The manufacturing method includes depositing a liquid precursor on the substrate 22 before forming the lower electrode 26. |
priorityDate |
1995-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |