| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00 |
| filingDate |
2000-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2002-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100331888-B1 |
| titleOfInvention |
The manufacturing method of etching reagent and substrate for electronic device, and electronic device |
| abstract |
In the case of using a low-resistance Cu film as the wiring material, the Cu film can be etched by a simple chemical etching method called a stop deposition method, and the change in the etch rate is small over time, resulting from an error in the amount of side etching of the Cu film. Provided is an etchant that can prevent the phenomenon of tapering.n n n An etchant consisting of an aqueous solution containing peroxo-sulfuric acid-potassium hydrogen hydrogen and fluoric acid. A mask 27, 28 having a predetermined pattern is formed on the surface of the laminated film in which a Ti film or a Ti alloy 3 and a Cu film 4 are sequentially formed on the base 2, and the laminate film is etched using an etchant having the above configuration to form a gate of the predetermined pattern. A method of manufacturing a thin film transistor substrate, forming electrode 5 (laminated wiring) and lower pad layer (laminated wiring) 16b. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9111813-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8785935-B2 |
| priorityDate |
1999-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |