| abstract |
The present invention relates to a silicone copolymer resin for two-layer resists, a method for producing the same, and a method for forming a resist pattern using the resin. According to the present invention, a thin resist containing silicon is applied on an i-line or g-line resist during the semiconductor manufacturing process, followed by exposure, wet developing the upper resist, and dry developing the lower resist with O 2 plasma. By forming the resist pattern, it is possible to form a fine pattern in which the resist pattern does not collapse, thereby greatly reducing the production cost of the semiconductor device. |