http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100329606-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1995-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_398edf88c19203339dec7b7e40d85030 |
| publicationDate | 2002-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100329606-B1 |
| titleOfInvention | Device isolation insulating film formation method of semiconductor device |
| abstract | The present invention relates to a method for forming a device isolation insulating film of a semiconductor device, wherein a high concentration of ion implantation layer is formed in a peripheral circuit portion using a first device isolation mask on a semiconductor substrate, and a trench is formed in a cell portion using a second device isolation mask. After forming, a field oxide film is formed on the peripheral circuit portion by a field oxidation process and an insulating layer is formed to planarize the entire upper surface. Then, the cell portion and the peripheral circuit portion are separated by a planarization etching process, and the cell portion and the peripheral circuit portion overlap. By reducing the size of the chip and forming a planarized device isolation insulating film, it is possible to achieve high integration of the semiconductor device and thereby improve the reliability of the semiconductor device. |
| priorityDate | 1995-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.