| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2231 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-347
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0421
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0087 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-347
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
1994-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2002-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100329023-B1 |
| titleOfInvention |
Ohmic Contact of the Inclined Type of the P-Type II-VI Semiconductor |
| abstract |
A group II-VI laser diode comprising a substrate, a device layer made of a p-type II-VI semiconductor, and an electrode and an ohmic contact layer between the electrode and the device layer. The ohmic contact layer includes a semiconductor compound having an inclined composition including ZnTe. The relative amount of ZnTe in the semiconductor compound increases with increasing distance of the ohmic contact layer from the device layer. In the first embodiment, the ohmic contact layer includes a semiconductor alloy having an inclined composition including ZnTe and a semiconductor compound of the device layer. The amount of ZnTe of the alloy increases with increasing distance of the ohmic contact layer from the device layer of the first embodiment. In a second embodiment the ohmic contact layer comprises a layer of ZnTe spaced between layers of semiconductor compound of the device layer. The thickness of the layer of ZnTe increases or the thickness of the layer of the semiconductor compound of the device layer decreases, and the distance of the ohmic contact layer from the device layer of the second embodiment increases. |
| priorityDate |
1993-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |