http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100327564-B1

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-26
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N31-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-28
filingDate 1998-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5e4e44289a758c02138a79a86915a53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69adc23d2122f30fae1092568c64466d
publicationDate 2002-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100327564-B1
titleOfInvention Preparation method for scanning electron microscopy
abstract The present invention observes the formation state of the barrier metal layer, especially the TiN / Ti layer, which is formed to reduce the contact resistance between the metal and the insulating layer or the diffusion layer and prevent the diffusion of the insulating layer when forming the conductive layer by scanning electron microscopy. The present invention relates to a method for fabricating a sample for attaching a portion of a semiconductor device in which a barrier metal layer and an aluminum layer are deposited at a specific polarity, and soaking it in an electrolytic solution to leave only the skeleton of the substance to be observed. The advantage of maximizing the distance between different materials is that the scanning electron microscope can be used to obtain a clear image.
priorityDate 1998-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.