http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100326814-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 1999-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100326814-B1 |
| titleOfInvention | Method for forming a inter layer dielectric of metal line in semiconductor device |
| abstract | The present invention relates to a method for forming an interlayer interlayer insulating film of a semiconductor device, in particular using a SiOxCy thin film as the first interlayer insulating film on top of the lower interlayer insulating film deposited on the structure of the metal wiring formed, the first interlayer insulating film By forming a SiOxFy thin film having a lower dielectric constant than an oxide film or a nitride film as a capping insulating film, which is a second interlayer insulating film formed on the upper part of the structure, the double low dielectric constant interlayer insulating film structure is provided to reduce the overall capacitance of the metal wiring, and thus, in the low dielectric constant thin film. having a low adhesion problem can be improved by using a CH 4 or CF 4 plasma, and the via if the strip after contact etch photoresist, the vias Boeing problems caused by the attack (attack) of SiOxCy thin sidewall CH 4 or Minimization through the CF 4 plasma treatment can improve the manufacturing process yield of the semiconductor device. |
| priorityDate | 1999-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.