http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100325952-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-076 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate | 1995-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100325952-B1 |
| titleOfInvention | Photovoltaic devices and how to manufacture them |
| abstract | A photovoltaic element with a high release voltage is provided by prohibiting the injection of carriers from a top electrode to a p-type semiconductor disposed on the top surface of the production layer.n n n According to the present invention, a structure in which an n-type semiconductor assumed to be denoted by "n", an i-type semiconductor assumed to be denoted by "i", and a p-type semiconductor assumed to be denoted by "p" include a nip junction. A photon layer that is thinned in this order over the substrate to form a substrate, the production layer including at least one of the structures, and wherein the top electrode is positioned over the p-layer with the production layer disposed on the top surface to form the photovoltaic device The power device has the characteristic that the p layer located on the top surface of the generation layer is composed of a first p layer containing crystals connected to the i layer and a second p layer containing amorphous connected to the upper electrode. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101529905-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190087822-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102448420-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150110700-A |
| priorityDate | 1994-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 81.