http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100324718-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 1999-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100324718-B1 |
| titleOfInvention | Method for fabricating semiconductor devices |
| abstract | The present invention relates to a method of manufacturing a semiconductor device by forming electrodes and capacitors of a semiconductor device by a process capable of preventing contamination. In the semiconductor device manufacturing method of the present invention, all or part of the pre-cleaning step, the lower electrode forming step, the doping step, the barrier film forming step, the dielectric film forming step and the upper electrode forming step are all performed in the same chamber, It is characterized by moving to another chamber through. According to the semiconductor device manufacturing method of the present invention, it is possible to prevent the growth of the natural oxide film and the generation of contaminated particles. In addition, since a thin film material suitable for forming a high capacitance capacitor can be used, it is possible to manufacture a highly integrated semiconductor. |
| priorityDate | 1998-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.