http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100324396-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate | 1998-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100324396-B1 |
| titleOfInvention | Nitride semiconductor light-emitting device and manufacturing method of the same |
| abstract | Using an indium-containing third-group nitride semiconductor layer with a multi-phase structure consisting of a main phase and sub-phases having different indium contents (In-contents) as a light emitting layer Wherein the sub-faces are formed mainly of a crystal surrounded by a strained layer at a boundary between the sub-faces and the main face. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8399948-B2 |
| priorityDate | 1997-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.