http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100319876-B1
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1995-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100319876-B1 |
| titleOfInvention | Semiconductor device with cylindrical capacitor and its manufacturing method |
| abstract | A semiconductor device having a high reliability capacitor and a manufacturing method thereof are disclosed. According to the present invention, a first insulating film pattern having a contact hole, a second insulating film pattern, and a third insulating film pattern are formed on a silicon substrate, and spacers are formed on the sidewalls of the contact hole with fourth insulating films. By filling the contact hole in which the spacer is formed, a first conductive layer pattern having a width larger than the width of the third insulating layer pattern is formed on the third insulating layer pattern laterally, so as to be below both edges of the first conductive layer pattern. To form an undercut. Subsequently, a first antioxidant film pattern is formed on the first conductive film pattern, and a second conductive film pattern and a second antioxidant film pattern are sequentially formed on both edges of the first antioxidant film pattern. Next, the lower electrode of the capacitor is formed by forming a third oxide film pattern on sidewalls and undercut portions of the first conductive film pattern, the first antioxidant film pattern, the second conductive film pattern, and the second antioxidant film pattern. Form. Subsequently, a cylindrical capacitor is formed by having the dielectric film and the third conductive film sequentially deposited on the entire surface of the resultant product. A stable high dielectric film such as a stable tantalum pentoxide film (Ta 2 O 5 ) can be formed, thereby increasing the capacitance of the capacitor and reducing the leakage current. |
| priorityDate | 1995-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.