| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
1998-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0604573b9f7c5a9e0bd590863c90b776
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc206c9d09609c3be3a03208559c9b9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4258c93eeddd890b07333238f1abd28d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad507a6226704cd57bb4792c8ef1055f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cc420506666ebb893a7f8b3d4beb8d7 |
| publicationDate |
2002-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100318978-B1 |
| titleOfInvention |
Silicon nitride from bis(tertiarybutylamino)silane |
| abstract |
The present invention provides a method for low pressure chemical vapor deposition of silicon nitride from ammonia and a silane of formula (tC 4 H 9 NH) 2 SiH 2 , which imparts improved properties to the resulting film for use in the semiconductor industry. |
| priorityDate |
1997-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |