http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100314649-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-83 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-026 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-00 |
| filingDate | 1998-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100314649-B1 |
| titleOfInvention | Sensing circuit for flash memory device |
| abstract | 1. TECHNICAL FIELD OF THE INVENTIONn n n Sensing Circuit of Flash Memory Devicen n n 2. Technical problem to be solved by the inventionn n n In the case of a flash memory device that shares a column selection signal of a memory cell array and a redundant cell array, the sense amplifier of the redundancy cell array as well as the sense cell of the redundancy cell array are enabled regardless of whether the repair is performed or not. To solve the problem.n n n 3. Summary of the Solution of the Inventionn n n By decoding the sense amplifier enable signal generated in the read mode by using the signal generated after the repair of the flash memory cell, the memory cell is used as a signal to enable the array bias of the redundancy sense amplifier. Redundant sense amplifiers only work if repaired. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9852815-B2 |
| priorityDate | 1998-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.