http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100312368-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04B10-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04B10-2507 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04B10-293 |
| filingDate | 1993-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100312368-B1 |
| titleOfInvention | Compound semiconductor integrated circuit and optical regenerator using the same |
| abstract | The present invention relates to a compound semiconductor integrated circuit having a field effect transistor having an extremely high speed and a light regenerative repeater using the same. In order to solve the problem of a reduction in side etching and a short circuit between low frequency vibration noise and wiring, Frequency oscillation of the compound semiconductor integrated circuit can be reduced by providing the semiconductor layer or the electrode layer isolated on the surface of the semiconductor between the semiconductor substrate and the element isolation trench having the depth reaching the heterojunction interface on at least the semi-insulating substrate or the buffer layer . Further, by setting the thickness of the buffer layer having the heterojunction to be 150 nm or more, the low frequency vibration can be reduced. An element-to-element isolation of 2 mu m or less in width reaching the buffer layer constituting the heterojunction on the surface of the element region is formed so as to surround the element region and the element peripheral region or the element region in the recess, Is formed at an angle of 10 to 60 degrees with respect to the semiconductor layer surface, it is possible to prevent short-circuiting of the wiring. By combining all of these structures, it is possible to obtain a compound semiconductor integrated circuit having a small side gate effect, a low frequency oscillation, and a short circuit of wiring, and the slab-based integrated circuit using the same can operate normally at a very high speed. |
| priorityDate | 1992-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.