| abstract |
There is provided a semiconductor device comprising a substrate, a first wiring layer, a first oxide film, a dielectric film, a first nitrogen layer, a second wiring layer, a via hole, and a second wiring layer. A first wiring layer is formed on this substrate, and a first oxide film is formed on this first wiring layer. The dielectric film has a low dielectric constant and is disposed between the first and second wiring layers. The first nitrogen layer contains nitrogen and is formed in the first oxide film. The via hole is formed through this dielectric film, and is formed between the first wiring layer and the second wiring layer to electrically connect the first wiring layer and the second wiring layer. The second nitrogen layer contains nitrogen and is formed on the sidewall of the via hole. Since the first nitrogen layer and the second nitrogen layer prevent the diffusion of moisture into various regions of the semiconductor device, leakage current between adjacent wirings of the wiring layer is prevented. In addition, when the via hole is formed, the possibility that no opening is formed in the via hole is reduced. |