http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100310478-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-85 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-16 |
| filingDate | 1997-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100310478-B1 |
| titleOfInvention | Thermoelectric piece and process of making the same |
| abstract | The thermoelectric device according to the present invention is deposited on a bismuth-antimony-tellurium (Bi-Sb-Te) or bismuth-tellur- selenium (Bi-Te-Se) semiconductor matrix and thereon to prevent diffusion of solder material into the semiconductor matrix. Adhesion is strengthened between the diffusion barrier layers. A tin alloy layer is provided between the diffusion barrier layer of molybdenum, tungsten, niobium and nickel and the semiconductor matrix to enhance the adhesion. The tin alloy is formed at the interface of the semiconductor matrix by interdiffusion of at least one element of the semiconductor and tin. It has been found that tin does not degrade the thermoelectric properties when diffused into the semiconductor matrix and provides sufficient adhesion to the metal elements of the diffusion barrier layer. The thermoelectric element,n n n a) manufacturing a thermoelectric semiconductor having opposing surfaces;n n n b) depositing a tin layer on each opposing surface of said thermoelectric semiconductor;n n n c) diffusing at least one element of the thermoelectric semiconductor and tin to form a tin alloy layer on each of the opposing surfaces, andn n n d) through the deposition of a diffusion barrier layer of molybdenum, tungsten, niobium, and nickel on each of the tin alloy layers. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8299349-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101207300-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010008247-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101616109-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101439461-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101469760-B1 |
| priorityDate | 1996-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.