http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100308916-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cbffa3b81b3b862dc7220b5648f5f745 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F3-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F3-00 |
| filingDate | 1998-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fe3c139bbfa11279e1c34e4a2788d44 |
| publicationDate | 2002-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100308916-B1 |
| titleOfInvention | β-ketoester or amide Type Precursors for Ferroelectric BST thin films |
| abstract | The present invention relates to a precursor for manufacturing Ba x Sr 1-x TiO 3 (BST) thin film, which is a ferroelectric used in the manufacture of a capacitor of a giga-class dynamic random access memory (DRAM) using high dielectric constant characteristics. As precursors, materials for the preparation of BST thin films were synthesized using new types of diketo esters and amide ligands. In particular, Ba and Sr compounds using a variety of N, 0-electron donor ligand together to synthesize a compound having a good volatile monomer structure. |
| priorityDate | 1998-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.