http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100305003-B1
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1995-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100305003-B1 |
| titleOfInvention | Active matrix type liquid crystal display |
| abstract | There is provided a method for easily and efficiently forming thinly doped drain (LDD) regions in source / drain regions of thin film transistors having gate electrodes covered with an oxide film. The lightly doped drain (LDD) region is formed by introducing an impurity into the island-shaped silicon film in a self-aligned manner using the gate electrode as a mask. First, low-concentration impurity regions are formed in an island-shaped silicon film by using a rotation-gradient ion implantation method so as to perform ion doping from an oblique direction with respect to the engine. At this time, low concentration impurity regions are also formed under the gate electrode. Thereafter, impurities are introduced at a high concentration vertically to the substrate to form high concentration impurity regions. In this process, a low concentration impurity region remains under the gate electrode. Forming a thinly doped drain region. |
| priorityDate | 1994-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.