http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100303194-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B53-017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1436 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B53-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B53-017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 1998-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100303194-B1 |
| titleOfInvention | Polishing abrasive grains, polishing agent and polishing method |
| abstract | FIELD OF THE INVENTION The present invention relates to abrasive grains, abrasives and polishing methods, wherein in the present invention, a metal oxide having a hydrophilic surface and having a surface potential of 50 mV or less in absolute value at pH 7 (eg For example, an abrasive containing abrasive grains of cerium oxide, zirconium oxide or manganese oxide is used to polish the surface of the substrate, in particular the surface of the semiconductor device substrate, preferably wherein the abrasive grains are hydrophilic functional groups at extremities. , Preferably has a hydroxyl group. The surface of the substrate is then washed with an aqueous cleaning solution containing pure water. Thus, abrasive grains remaining on the surface of the polished substrate can be removed to a satisfactory level by simple cleaning using only an aqueous cleaning solution. |
| priorityDate | 1997-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.