| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-903
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1998-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2001-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100301644-B1 |
| titleOfInvention |
Interconnects using metal spacers and method for forming same |
| abstract |
A preferred embodiment of the present invention is to provide increased conductivity between interlevel interconnects. In a preferred embodiment, sidewall spacers are used on the sides of the connection lines to increase the contact area between the interconnect lines and the interconnect studs. This area increase not only improves the connection resistance, but also allows device scaling without reducing the conductivity to an unacceptable level in the connection or adding significant cost in the manufacturing process. |
| priorityDate |
1997-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |