http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100301272-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 |
| filingDate | 1998-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100301272-B1 |
| titleOfInvention | Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof |
| abstract | The present invention relates to a vapor deposited thick arc layer and a method for providing a single adjustable thick underlayer coating based on an amorphous carbon thin film. These thin films can be hydrogenated, fluorinated or nitrided carbon thin films. Such thin films have an adjustable refractive index from about 1.4 to about 2.1 at UV and DUV wavelengths, in particular 365, 248, 193 nm, and an extinction coefficient adjustable from about 0.1 to about 0.6. Because of this, the thin film can be very usefully used as a thick underlayer in a two layer resist system. In addition, the thin films produced by the present invention can be deposited on device topography with high conformality and etched by oxygen and / or fluorine ion etching processes. Due to these inherent properties, these thin films can be used to form a single or tunable thick bottom layer at UV and DUV wavelengths so that the reflectivity at the resist / sublayer interface is substantially zero. As a result, the performance of the semiconductor chip is greatly improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101711424-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101414307-B1 |
| priorityDate | 1997-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.