http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100297722-B1

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
filingDate 1998-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2001-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100297722-B1
titleOfInvention Capacitor Manufacturing Method for Semiconductor Devices
abstract The present invention is a method of manufacturing a capacitor of a semiconductor device, and according to the present invention, a lower active film is formed on an active region of a semiconductor substrate. After the hemispherical particle layer is formed on the lower positive film surface, an oxide film is formed on the hemispherical particle layer to a thickness of 20 GPa or less. To this end, the lower electrode film may be exposed to the air for a predetermined time to form a natural oxide film, or the oxide film may be formed in a certain gas atmosphere in the reaction chamber. Subsequently, a nitride film as an oxidation inhibiting film, a tantalum oxide film as a dielectric film and an upper electrode film are sequentially formed on the oxide film.n n n As in the present invention, the leakage current characteristics are improved by artificially forming the oxide film after the lower electrode film is formed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100474538-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040006773-A
priorityDate 1998-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 38.