http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100297722-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
filingDate | 1998-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2001-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2001-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100297722-B1 |
titleOfInvention | Capacitor Manufacturing Method for Semiconductor Devices |
abstract | The present invention is a method of manufacturing a capacitor of a semiconductor device, and according to the present invention, a lower active film is formed on an active region of a semiconductor substrate. After the hemispherical particle layer is formed on the lower positive film surface, an oxide film is formed on the hemispherical particle layer to a thickness of 20 GPa or less. To this end, the lower electrode film may be exposed to the air for a predetermined time to form a natural oxide film, or the oxide film may be formed in a certain gas atmosphere in the reaction chamber. Subsequently, a nitride film as an oxidation inhibiting film, a tantalum oxide film as a dielectric film and an upper electrode film are sequentially formed on the oxide film.n n n As in the present invention, the leakage current characteristics are improved by artificially forming the oxide film after the lower electrode film is formed. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100474538-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040006773-A |
priorityDate | 1998-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.