| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
1997-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2001-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100293401-B1 |
| titleOfInvention |
Fabrication method for high-capacitance storage node structures |
| abstract |
The present invention accumulates high capacitance by patterning hybrid resists 12 to provide both negative tones 16 and positive tons 18 in the exposed areas 14. The invention relates to the creation of a high capacitance storage node structure in a substrate. After removal of the positive tone 18, the substrate 12 is etched using the negative tone region 16 and the unexposed hybrid resist 12 as a mask. This provides a trench 22 in the substrate 12 having a protrusion 24 centered and protruding upwards. A capacitor 26 is then fabricated by covering the sidewalls of the trench 22 and protrusions 24 with a dielectric 28 and filling the trench with a conductive material 30 such as polysilicon. |
| priorityDate |
1996-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |