http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100292248-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03914 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 |
| filingDate | 1998-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100292248-B1 |
| titleOfInvention | Indium bump manufacturing method using plasma |
| abstract | In order to increase the height of the indium bumps and to improve the tensile strength of the bumps, the present invention is directed to depositing a protective layer, which is a material having no binding force with indium, on a chip; Opening a portion of the conductive metal pad where the bump is to be placed in the protective layer using photoresist patterning; Depositing UBM thereon without removing the patterning photoresist; Removing the photoresist to pattern a diffusion barrier layer; Forming an indium bump on the UBM having a larger cross-sectional area than the UBM; Reflow by exposing the indium bump to a plasma; Provided is a method of manufacturing indium bumps using plasma. |
| priorityDate | 1998-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.