http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100289946-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa85b9509fe8e25d0162494c3a8bd37a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F1-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F1-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F1-00 |
| filingDate | 1998-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c493a323da14c3b603ff5e267e94efd1 |
| publicationDate | 2001-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100289946-B1 |
| titleOfInvention | Copper thin film precursor solution for chemical vapor deposition and its manufacturing method |
| abstract | The present invention utilizes a precursor solution used to deposit a copper wiring thin film on a silicon substrate by chemical vapor deposition, which is excellent in resistivity and resistance to electron migration as a wiring material of a semiconductor device, and a method of preparing the solution, and a solution thereof. The present invention relates to a method for depositing a copper thin film on a silicon substrate, and the present invention is to dissolve a metal complex compound defined by Formula 1 below with a Lewis base defined by Formula 2 to Formula 5 or a Lewis acid represented by Formula 6, or Provided are a precursor solution for copper thin film chemical vapor deposition dissolved in a mixed solution of a Lewis base and a Lewis acid, and a method of manufacturing the same.n n n <Formula 1>n n n n n n n n In Formula 1, R is selected from hydrogen (H), fluorine (F) or alkyl having 1 to 4 carbon atoms, perfluoroalkyl, and perfluoroaryl, and R 1 and R 2 are each independently carbon atoms. L, which is an alkyl group or a perfluoroalkyl group of 1 to 7, and is defined as a Lewis base, is an organic or organometallic compound capable of providing a lone pair of electrons to the center of a copper metal, and is an alkene represented by the following Chemical Formula 2, It is selected from alkyne, silane represented by formula (4), or silane represented by formula (5).n n n <Formula 2>n n n (R 3 ) (R 4 ) C = C (R 5 ) (R 6 )n n n In Formula 2, R 3 , R 4 , R 5 , and R 6 each represent the same or different hydrogen (H), fluorine (F), or alkyl, perfluoroalkyl, or alkoxy having 1 to 6 carbon atoms. .n n n <Formula 3>n n n R 7 C≡CR 8 n n n In Formula 3, R 7 and R 8 each represent the same or different hydrogen (H) or an alkyl, perfluoroalkyl or alkoxy group having 1 to 6 carbon atoms.n n n <Formula 4>n n n (R 9 ) (R 10 ) C = CH- (CHR 11 ) n -Si (OR 12 ) 3 n n n In Formula 4, R 9 , R 10 , R 11, and R 12 each represent the same or different hydrogen (H), fluorine (F), or an alkyl group or perfluoroalkyl group having 1 to 4 carbon atoms, and n is 0 to 3 It means an integer.n n n <Formula 5>n n n (R 10 ) C≡C- (CHR 11 ) n -Si (OR 12 ) 3 n n n In Formula 5, R 10 , R 11, and R 12 each represent the same or different hydrogen (H), fluorine (F), an alkyl group having 1 to 4 carbon atoms, or a perfluoroalkyl group, and n represents an integer of 0 to 3. do.n n n <Formula 6>n n n n n n n n In the formula 6 R, R 1 and R 2 are the same as R, R 1 and R 2 in the formula (I). |
| priorityDate | 1998-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.