| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fad0246171945d5e4957c9be0b37a2f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02672
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2000-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64375aa22cdfdec20d8740d3c355bc3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff2d8505024b20c118704e071eefd15d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fa39d90fb8180723b70844f2ed0589a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b493ea0847c628f680de1e7f8fa2b69f |
| publicationDate |
2001-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100287485-B1 |
| titleOfInvention |
A method of manufacturing a thin film transistor |
| abstract |
The present invention provides a method of manufacturing a thin film transistor including an active layer having a channel region, comprising the steps of: disposing a substance that promotes crystallization of silicon in a semiconductor film containing silicon; and crystallizing the semiconductor film by heating; And a step of introducing phosphorus ions into the selected region of the crystallized semiconductor film, and annealing the crystallized semiconductor film into which the phosphorus ions have been introduced using a lamp. |
| priorityDate |
1993-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |