http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100286127-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1998-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100286127-B1 |
| titleOfInvention | How to Form Trench Isolation in Semiconductor Devices |
| abstract | The present invention relates to a trench isolation formation method of a semiconductor device that prevents line dents. A thermal oxide film is formed, and trench liners are formed on both side walls of the first insulating film and the thermal oxide film. Then, after the insulating film is formed on the trench liner including the trench, the second insulating film and the trench liner are etched flat until the surface of the first insulating film is exposed, and the first insulating film and the trench liner are dry etched. Removed. Such a trench isolation formation method of a semiconductor device can prevent liner dents by making dry etching without difference in etching rate between the silicon rich nitride film serving as the trench forming mask and the silicon nitride film serving as the trench liner, thereby making the trench liner thicker. It is possible to form, thereby improving the refresh function of the device. |
| priorityDate | 1998-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.