http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100285890-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-589 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-54 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-589 |
| filingDate | 1997-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100285890-B1 |
| titleOfInvention | Polyorganosiloxazanes and process for the preparation thereof |
| abstract | The present invention provides a polyorganosiloxaneoxane that can be converted to a low dielectric constant ceramic material. The polymers according to the invention are, as main repeating units,-(RSiN 3 )-,-(RSiN 2 O)-,-(RSiNO 2 )-and-(RSiO 3 )-(where R is alkyl, alkenyl, cyclo Alkyl, aryl, alkylamino or alkylsilyl group), and the number average molecular weight is 300 to 100,000. The polyorganosiloxane of the present invention is excellent in heat resistance, and the ceramic material which can be obtained by baking the same at a predetermined temperature has a very low dielectric constant of 2.7 or less, which is particularly useful in the field of electronic materials. |
| priorityDate | 1996-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 70.