| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
1998-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2001-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100283485-B1 |
| titleOfInvention |
Planarization method of semiconductor device |
| abstract |
A method of planarizing a semiconductor device for forming an interlayer insulating film between metal patterns, comprising: a first process of depositing a porous oxide film on the metal patterns; Performing a plasma treatment on the surface of the oxide film to cure the surface of the porous oxide film; And a third process of performing planarization by the CMP process after the third process. |
| priorityDate |
1998-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |