| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3202 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02395 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
1994-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2001-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100281939-B1 |
| titleOfInvention |
Semiconductor epitaxial substrate |
| abstract |
Crystals are formed by epitaxial growth on a single crystal gallium arsenide substrate whose substrate crystallographic orientation is inclined from the crystallographic surface orientation of one {100} plane and its gradient size is 1 ° or less. At least part of the epitaxial crystal is a crystal of In x Ga (1-x) As (where 0 < x < 1).n n n Epitaxial growth is achieved by a pyrolytic vapor phase growth method.n n n The microscopic surface roughness of the In x Ga (1-x) As layer is small. The variation in film thickness is also small. Therefore, by using such an epitaxial substrate as a channel layer and a semiconductor laser active layer of a field effect transistor, excellent characteristics can be given to these elements. |
| priorityDate |
1993-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |