http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100280621-B1
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1998-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100280621-B1 |
| titleOfInvention | Chemical vapor deposition system and method for removing particulate contaminants in tungsten silicide deposition process |
| abstract | In order to maintain the reaction gas at a stable level in the tungsten silicide deposition process, the present invention performs a step of removing carrier gas lines and contaminants in the chamber immediately after the deposition step is completed. This step supplies the carrier gas to the chamber, but the carrier gas line for the silicon source gas is vacuumed. After this step, the environment inside the chamber is formed to supply the cleaning gas to the chamber to form a plasma, and the plasma is formed, and the reaction gas line through which the reaction gas flows for reacting with the silicon source gas is vacuumed. To remove the contaminants in the reaction gas line and chamber. In addition, an object of the present invention is to provide a cleaning gas to the chamber, but also by a deposition system having a means for the cleaning gas remaining in the reaction gas line and the carrier gas line when performing the deposition process so as not to act as a contaminant in the deposition process Can be achieved. |
| priorityDate | 1998-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.