| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
1996-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2001-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100279790-B1 |
| titleOfInvention |
Semiconductor device and manufacturing method |
| abstract |
The present invention is to reduce the capacitance between the wirings and to improve the performance of the LSI. The wiring W1 connected to the source / drain regions 24a and 24b of the MOS transistor is formed on the insulating layer 25. The wiring W1 is composed of metals 28a and 28b such as copper and barrier layers 27a and 27b covering the surfaces of the metals 28a and 28b. The insulating layers 29, 30, 32 are formed on the wiring W1. The wirings W1 are cavities 31. The cavity 31 is filled with a mixed gas of oxygen and carbon dioxide or air. The wiring W2 is formed on the insulating layer 32. The wirings W2 also have a cavity 38 in the same manner as the wirings W1. The cavity 38 is filled with a mixed gas of oxygen and carbon dioxide, or air. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100780627-B1 |
| priorityDate |
1995-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |