http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100273222-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b06cd22ab3bfbdca17825e5d731dee1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4587 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4401 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1997-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ff8271ee586fbed1d5447cd547ab2e9 |
| publicationDate | 2000-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100273222-B1 |
| titleOfInvention | Apparatus for semiconductor chemical vapor deposition |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor vertical chemical vapor deposition apparatus. In the related art, external air is introduced into a tube when a boat is loaded, thereby forming an oxide film on a wafer, thereby degrading quality. In the semiconductor vertical chemical vapor deposition apparatus of the present invention, the air blocking means 20 is installed outside the shutter 12, and the nitrogen curtain 50 is provided on the lower side of the opening 11a of the tube 11 when the boat 14 is loaded. By forming a, it prevents the inflow of external air into the inside of the tube, thus preventing the formation of an oxide film on the wafer by the external air as in the prior art has the effect of improving the quality of the wafer. |
| priorityDate | 1997-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.