http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100270590-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-448 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 1997-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4a355fc5ee4ae2a11558a66ac1acca3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8893c769178e9acd66101c776a38c30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67fb5643b4e6c33433857d14b3f4e089 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76beecf3410c1d68016f025e594811f9 |
| publicationDate | 2000-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100270590-B1 |
| titleOfInvention | Chemical vapor deposition apparatus |
| abstract | The present invention relates to a chemical vapor deposition apparatus for forming a dielectric thin film such as a semiconductor memory.n n n The chemical vapor growth apparatus of the present invention includes a CVD raw material container, a vaporizer 5, and a reactor. In the vaporizer | carburetor 5, the vaporization chamber 5f which has a substantially cylindrical shape is formed, the nozzle 5c is attached to the main surface 6 corresponded to the cylindrical side surface of a vaporization chamber, and a raw material transport piping connection hole is a principal surface. It is provided in (6). The CVD raw material is introduced into the vaporization chamber and vaporized, and the vaporized CVD raw material is transferred to the reactor.n n n In the chemical vapor phase growth apparatus of the present invention, generation of foreign matter such as residues in the apparatus is reduced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100454292-B1 |
| priorityDate | 1997-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.