http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100268524-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fad0246171945d5e4957c9be0b37a2f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-10 |
| filingDate | 1997-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11fa6ff75279c74249bf4780e122d62b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2997029e9c6d5a7b02e735ed43d27300 |
| publicationDate | 2000-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100268524-B1 |
| titleOfInvention | Semiconductor device manufacturing method |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of fabricating a semiconductor device using laser processing in the step of crystallizing and annealing semiconductor materials in the manufacture of a liquid crystal display device using a thin film transistor. It is to provide a technique for forming a thin film transistor disposed in the peripheral circuit region and a thin film transistor disposed in the pixel region separately according to the characteristics required in the manufacturing process. In the annealing step by laser light irradiation, the semiconductor thin film is partially masked to selectively irradiate the laser light to the semiconductor thin film. For example, in the fabrication of an active matrix liquid crystal display device, in order to irradiate the laser light to the peripheral circuit area and the pixel area under different conditions, the laser light is irradiated to the required irradiation energy density using a mask. In this way, a crystalline silicon film having a selectively required degree of crystallinity can be obtained. |
| priorityDate | 1994-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.