http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100268303-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1007735376d07808ebe297f823b2829 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-123 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 1997-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d3d9de29823ce38bc9ca065255bcea0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ac9f85afe19f8bbe958dff09d28aa03 |
| publicationDate | 2000-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100268303-B1 |
| titleOfInvention | LCD and its manufacturing method |
| abstract | According to the present invention, a protective film 126 made of an organic material such as BCB is formed on a transparent substrate on which data bus lines, gate bus lines, and switching devices are formed.n n n The protective film is surface treated with O 2 plasma or the like for a predetermined time, and a primary ITO film is deposited on the protective film 126.n n n The primary ITO film and the protective film are wet-etched or dry-etched to form a contact hole so that a part of the drain electrode of the switching element is exposed.n n n A secondary ITO film is deposited on the entire surface of the substrate.n n n The secondary ITO film and the primary ITO film are etched by wet etching or the like to form the pixel electrode 104 on the passivation film 126.n n n Accordingly, in the present invention, since the surface of the protective film is not exposed to the etching gas during the etching process for forming the contact hole, the surface of the protective film is not caused by the etching gas and the pattern defect of the pixel electrode formed on the protective film does not occur. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100394556-C http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9488889-B2 |
| priorityDate | 1997-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.