http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100265995-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b06cd22ab3bfbdca17825e5d731dee1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1997-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57e84f46a31a0742c0cf997fd3b43fa0 |
| publicationDate | 2000-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100265995-B1 |
| titleOfInvention | Surface flattening method of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for leveling a surface of a semiconductor device in which the etch ratios etch back the layers to flatten the surface. Stacking the layers sequentially, first etching back to the EDP of the planarization layer to expose the surface of the interlayer insulating layer, and changing the etch rate of the planarization layer remaining between the exposed interlayer insulating layer and the unit element And a second etch back for a predetermined time. |
| priorityDate | 1997-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.