http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100265360-B1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate | 1997-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2000-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03cefe2364ebb9243e600ad5d1a0a76e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_899c63756caf9f8f41bed87dfdde59ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71726c6dcbeacaf7fa63a73812441a4c |
publicationDate | 2000-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100265360-B1 |
titleOfInvention | Method for forming passivation layer in semiconductor device |
abstract | The present invention has been made in an effort to provide a method of forming a protective film suitable for preventing corrosion of a lower metal wiring layer by pin holes and cracks by overcoming step coverage due to high integration of devices, and a passivation layer of the present invention for this purpose. ) forming method, comprising: a first step of (HSiO 3/2) n coating film on a substrate and baking the predetermined process is completed; After the first step, a second step of performing curing for the (HSiO 3/2) n to remove the Si-H bond in the film; And forming a silicon nitride film after the second step. |
priorityDate | 1997-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.