http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100261022-B1

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filingDate 1997-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2000-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74fc9c5f24a9a1e4ed067d31601fc429
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccc90cef43e01f47f5daf0b7c099c9cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60957fc431ba07e789636251990f44a5
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publicationDate 2000-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100261022-B1
titleOfInvention Chemically Amplified Resist Composition
abstract The present invention provides a chemically amplified resist composition comprising a polymer of Formula 1 and a Photoacid Generator (PAG).n n n [Formula 1]n n n n n n n n Wherein R 1 and R 2 are C 1 to C 10 aliphatic hydrocarbons having hydroxy or carboxylic acid groups, R 3 is hydrogen or methyl, R 4 is t-butyl or tetrahydropyranyl, m and n are Is an integer.n n n The present invention also provides a chemically amplified resist composition comprising a polymer of formula (2) and PAG.n n n [Formula 2]n n n n n n n n Wherein x is a C 5 to C 8 cyclic or alicyclic compound, R 1 is selected from the group consisting of hydrogen and methyl, R 2 is t-butyl, tetrahydro While it is selected from the group which consists of pyranyl (Tetrahydropyranyl) and adamantyl (Adamantyl), m and n are integers n / (m + n) = 0.1-0.5.n n n According to the present invention, it is possible to use a developer used in a conventional method as a developer at the time of development, to have excellent etching resistance, and to provide excellent adhesion to the film quality.
priorityDate 1996-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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