http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100258056-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6cccf5d31e8a9b5c5751a2626896104e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-022 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 |
| filingDate | 1997-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56ca08344c2182d35c9b381560fdc231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23c2d4a45ddd6b363ddc6adef5dbe6ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_885c9bdbbbd9054c6d84d958f4001951 |
| publicationDate | 2000-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100258056-B1 |
| titleOfInvention | Fabrication Method of SnO2 Thin Films for Gas Sensors from Sn Targets Using Dual Ion Beam Sputtering |
| abstract | The present invention relates to a method for manufacturing a SnO 2 thin film for a gas sensor from a Sn target using dual ion beam sputtering, wherein a desired type of substrate is washed with a detergent and ultrapure water, dried, and then attached to a substrate holder and evacuating a vacuum. When the vacuum pressure reaches a high vacuum of 2.0 × 10 -6 Torr, argon is supplied to the auxiliary ion gun and an RF plasma is generated to ion clean the substrate for several minutes with an ion current of 300 eV and 0.5 mA / cm 2 , and the substrate rotates. After cleaning, close the shutter, supply argon to the main ion gun, sputter Sn target with ion current, and supply oxygen to the auxiliary ion gun to generate plasma, and then the acceleration and stabilization is enhanced by opening the shutter on the SnO 2 crystal thin film prepared as above, comprising the steps of: forming a thin film of desired thickness, and when toward the foil In order to improve the stability consists in performing a heat treatment for 2 hours or more at least from 350 to 600 ℃ a stoichiometric composition at a low temperature a high quality, which can shorten the annealing process after the polycrystalline deposition of SnO 2 for the control gas sensor SnO 2 is obtained. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100770653-B1 |
| priorityDate | 1997-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.