http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100258055-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6cccf5d31e8a9b5c5751a2626896104e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-022 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-46 |
| filingDate | 1997-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23c2d4a45ddd6b363ddc6adef5dbe6ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56ca08344c2182d35c9b381560fdc231 |
| publicationDate | 2000-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100258055-B1 |
| titleOfInvention | Fabrication method of SnO2 thin film for gas sensor from SnO2 target using dual ion beam sputtering |
| abstract | The present invention relates to a method for producing a SnO 2 thin film for a gas sensor from a SnO 2 target using dual ion beam sputtering, wherein a desired type of substrate is washed with a detergent and ultrapure water, dried, and then attached to a substrate holder and vacuum is applied. When the vacuum pressure reaches a high vacuum of 2.0 × 10 -6 Torr, argon is supplied to the auxiliary ion gun and an RF plasma is generated to ion clean the substrate for several minutes with an ion current of 300 eV and 0.5 mA / cm 2 . Rotate to ensure uniform washing, and after the cleaning, close the shutter and supply argon to the main ion gun to sputter SnO 2 target with ion current, and at the same time, supply oxygen to the auxiliary ion gun to generate plasma After accelerating and stabilizing toward the substrate, the shutter is opened to form a thin film of a desired thickness, and the substrate is rotated to achieve uniform deposition. And manufacturing a SnO 2 thin film crystals enhance the thin film stoichiometric composition having SnO 2 for the crystalline control the gas sensor at a low temperature resulted in the step of performing a heat treatment for 2 hours or more at least from 350 to 600 ℃ in order to improve the stability of such It is deposited to obtain SnO 2 of good quality which can shorten the post-heat treatment process. |
| priorityDate | 1997-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.