http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100255431-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9350e7132a8fb77e0f2ebb5b48d780ab |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C10-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C10-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B35-00 |
| filingDate | 1995-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dd295a8a12124d88abaca9720cf9fdc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e477dffd11bf9feff4fcf77b57599213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62a8209daf22878d603068470ff4edc5 |
| publicationDate | 2000-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100255431-B1 |
| titleOfInvention | Method and apparatus for growing thin film |
| abstract | The present invention relates to a method and apparatus for growing a thin film on a substrate, in which the substrate placed in the reaction space (1) undergoes repeated surface reactions alternately with at least two vapor phase reactants for the purpose of forming the thin film. It is. The reactants separated from their respective sources are repeatedly supplied in the form of gaseous pulses and alternately supplied into the reaction space 1, each gaseous reactant being formed on the surface of the substrate for the purpose of forming a solid thin film compound on the substrate. React with According to the invention, the flow of gas in the reaction space is limited on the gas flow passage after the substrate, such that the gas flow conductance in the reaction space is arranged to be greater in the transverse direction of the gas flow in the substrate than after the substrate. Apparatus suitable for supplementing the present invention includes flat elements 10 stacked vertically or horizontally, at least one of which is identical to each other and inside the reaction chamber 13 and concave forming a gas inlet or outlet channel. The parts / openings 7 and 4 are machined. |
| priorityDate | 1994-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.