http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100255164-B1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
filingDate 1993-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2000-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5819bac3d46ceb02c6673fcc34d08c95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69cd132df8df53454ff93c02eb605e16
publicationDate 2000-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100255164-B1
titleOfInvention Polysilicon / oxide etching method of semiconductor device
abstract The present invention relates to a method for etching polysilicon / oxide of a semiconductor device, and to etch polysilicon and oxide in a structure in which polysilicon is stacked on an oxide during a manufacturing process of a semiconductor device, By depositing and hardening the oxide to be applied as an etch mask on the stacked polysilicon, the hardened oxide is used as a hard mask (Hard Mask) using the existing oxide etching equipment (Oxide Etcher) only the laminated polysilicon below and By etching the oxides, the oxides applied as hard masks are simultaneously etched, so that polysilicon of semiconductor devices can improve product yield and reliability by using a single etching device and also reducing particles generated by the etching process. A method of etching an oxide is described.
priorityDate 1993-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID190217
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559572

Total number of triples: 15.