http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100246105-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-54
filingDate 1993-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2000-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f9bdbe7b31d4470a7dbf6381b8f1ff5
publicationDate 2000-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100246105-B1
titleOfInvention Semiconductor Wafer Processing Equipment
abstract A CVD film deposition apparatus on a semiconductor wafer includes a reaction vessel. The reaction vessel is provided with a rotating table on which a plurality of wafers can be transferred. In the reaction vessel, the partition is divided into six compartments by partitions. The partition chamber includes a wafer exchange chamber for lowering and unloading a wafer, a first process chamber for forming a silicon film on the wafer, a second process chamber for oxidizing the silicon film to a silicon oxide film, a wafer exchange chamber, first and second It becomes three exhaust chambers provided between processing chambers. The wafer is processed with the table rotated continuously. As the table rotates, the wafers are processed in the first and second processing chambers, and unwanted products generated therefrom are sequentially removed from the exhaust chamber.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101358641-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101318940-B1
priorityDate 1992-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.