http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100238698-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1992-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd19af03ee9ab4f515eb6def46ee46c8 |
| publicationDate | 2000-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100238698-B1 |
| titleOfInvention | Formation method of multilayer wiring |
| abstract | It is possible to prevent the formation of voids in the plugs of the multi-layered wiring and to easily embed through holes having a high aspect ratio. The SiO 2 film 6 as a side wall is formed along the inner wall of the through hole, and selective W-CVD is performed to form the tungsten plug 7A down to the polysilicon film 3. Next, the upper portion of the SiO 2 film 6 is etched away to expose the polysilicon film 3, and then selective W-CVD is performed again to form the tungsten plug 7B. Thereby, it becomes possible to form tungsten plugs 7A and 7B in the through-holes without generation of cavities. |
| priorityDate | 1991-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.