http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100234372-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1997-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fa89de63e5850bdc3c13e544e70460e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14b27b7bdb651ffde21c4af4da7354ef |
| publicationDate | 1999-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100234372-B1 |
| titleOfInvention | Insulating Planarization Method of Semiconductor Device |
| abstract | A method of achieving global planarization of a semiconductor device insulating film by forming an insulating film using a high density plasma (HDP) and a thin film having a lower polishing rate and then performing selective chemical mechanical polishing. The method includes forming an insulating film using Density Plasma (HDP), forming a thin film having a lower polishing rate than the HDP film, and planarizing the insulating film using a chemical mechanical polishing method. In the HDP CVD film applied in the present invention, since the deposition process and the etching process are performed at the same time, the deposition rate of the thin film is very low at the upper side of the pattern. Therefore, a low insulating film is deposited on top of a small pattern like a cell, and a thick insulating film is deposited on top of a large pattern and a field region. After depositing the HDP CVD film and depositing a thinner film having a lower polishing rate and performing selective chemical mechanical polishing, the flatness is greatly improved. |
| priorityDate | 1997-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419547014 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9999 |
Total number of triples: 16.