http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100234370-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1997-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fa89de63e5850bdc3c13e544e70460e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14b27b7bdb651ffde21c4af4da7354ef |
| publicationDate | 1999-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100234370-B1 |
| titleOfInvention | Planarization Method of Semiconductor Device |
| abstract | A predetermined pattern is formed on the semiconductor substrate, a first insulating film is formed on the resultant, and a hydrophilic layer is selectively formed only on a region where the step height of the first insulating film is high. Disclosed is a method of planarizing a semiconductor device, wherein the second insulating film is formed using an organic insulating material having hydrophobicity.n n n According to the present invention, global planarization of a semiconductor device can be achieved. |
| priorityDate | 1997-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.