http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100233142-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 |
| filingDate | 1992-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2d27dabaa31911f1d0f6dac5ab184af |
| publicationDate | 1999-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100233142-B1 |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | The present invention provides a method for manufacturing a BiCMOS device, and epitaxial growth is performed in two steps to form a high concentration n-type buried layer under the P-well of a memory cell, thereby appropriately adjusting the concentration of the P-well in which the memory cell is to be formed. While maintaining the concentration of the n-type buried layer, it is possible to increase the concentration of the n-type buried layer so that impurities such as solid state diffusion and autodoping are prevented from moving to the upper region of the buried layer to the maximum. The signal can be prevented from being destroyed. |
| priorityDate | 1992-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.