http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100228259-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b27deaf45890893586c2ed77ac13dc32 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-909 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1991-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40a92f80dbe16f5989ee3636a4d3cf4d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74ef4e07dd1c154f42c63d0fe0a42557 |
| publicationDate | 1999-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100228259-B1 |
| titleOfInvention | Thin film formation method and semiconductor device |
| abstract | [Configuration]n n n In the method of generating a plasma in the plasma chamber by the action of the electric field by the microwave and the magnetic field by the excitation coil disposed around the introduced plasma into the reaction chamber to form a thin film on the sample placed on the sample stage The method of forming a thin film according to claim 1, wherein a metal nitride film is formed on the sample by introducing Ar, H 2 and N 2 gases into the plasma chamber, and introducing a metal gas into the reaction chamber.n n n [effect]n n n A thin film excellent in step coverage can be formed in the contact hole portion, and a film can be formed thinner than the bottom portion in the contact hole side wall portion. Therefore, the reliability of the LSI device can be improved by making sure that the wiring material is embedded in the subsequent step. |
| priorityDate | 1990-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.